diff --git a/lib/stm32/common/flash_common_f01.c b/lib/stm32/common/flash_common_f01.c index 65f64bdf..cca224bf 100644 --- a/lib/stm32/common/flash_common_f01.c +++ b/lib/stm32/common/flash_common_f01.c @@ -61,7 +61,7 @@ reference manual for more information on clock speed ranges for each wait state. The latency must be changed to the appropriate value before any increase in clock speed, or after any decrease in clock speed. -@param[in] uint32_t ws: values from @ref flash_latency. +@param[in] ws values from @ref flash_latency. */ void flash_set_ws(uint32_t ws) @@ -158,8 +158,8 @@ was not properly erased. Status bit polling is used to detect end of operation. -@param[in] uint32_t address. Full address of flash word to be programmed. -@param[in] uint32_t data. +@param[in] address Full address of flash word to be programmed. +@param[in] data word to write */ void flash_program_word(uint32_t address, uint32_t data) @@ -213,8 +213,8 @@ an option byte had not been properly erased before calling this function. Only the lower 8 bits of the data is significant. -@param[in] uint32_t address. Address of option byte from @ref flash_options. -@param[in] uint16_t data. +@param[in] address Address of option byte from @ref flash_options. +@param[in] data value to write */ void flash_program_option_bytes(uint32_t address, uint16_t data) diff --git a/lib/stm32/common/flash_common_f234.c b/lib/stm32/common/flash_common_f234.c index 1d995660..33ca226b 100644 --- a/lib/stm32/common/flash_common_f234.c +++ b/lib/stm32/common/flash_common_f234.c @@ -34,9 +34,8 @@ programming manual for more information on clock speed ranges. The latency must be changed to the appropriate value before any increase in clock speed, or after any decrease in clock speed. -@param[in] uint32_t ws: values from @ref flash_latency. +@param[in] ws values from @ref flash_latency. */ - void flash_set_ws(uint32_t ws) { uint32_t reg32; diff --git a/lib/stm32/common/flash_common_f24.c b/lib/stm32/common/flash_common_f24.c index 4879c68d..1ca65786 100644 --- a/lib/stm32/common/flash_common_f24.c +++ b/lib/stm32/common/flash_common_f24.c @@ -215,8 +215,8 @@ This performs all operations necessary to program a 64 bit word to FLASH memory. The program error flag should be checked separately for the event that memory was not properly erased. -@param[in] uint32_t address -@param[in] uint64_t data. +@param[in] address Starting address in Flash. +@param[in] data Double word to write */ void flash_program_double_word(uint32_t address, uint64_t data) @@ -245,8 +245,8 @@ This performs all operations necessary to program a 32 bit word to FLASH memory. The program error flag should be checked separately for the event that memory was not properly erased. -@param[in] uint32_t address -@param[in] uint32_t data. +@param[in] address Starting address in Flash. +@param[in] data word to write */ void flash_program_word(uint32_t address, uint32_t data) @@ -275,8 +275,8 @@ This performs all operations necessary to program a 16 bit word to FLASH memory. The program error flag should be checked separately for the event that memory was not properly erased. -@param[in] uint32_t address -@param[in] uint16_t data. +@param[in] address Starting address in Flash. +@param[in] data half word to write */ void flash_program_half_word(uint32_t address, uint16_t data) @@ -300,8 +300,8 @@ This performs all operations necessary to program an 8 bit byte to FLASH memory. The program error flag should be checked separately for the event that memory was not properly erased. -@param[in] uint32_t address -@param[in] uint8_t data. +@param[in] address Starting address in Flash. +@param[in] data byte to write */ void flash_program_byte(uint32_t address, uint8_t data) @@ -325,9 +325,9 @@ This programs an arbitrary length data block to FLASH memory. The program error flag should be checked separately for the event that memory was not properly erased. -@param[in] uint32_t address. Starting address in Flash. -@param[in] uint8_t *data. Pointer to start of data block. -@param[in] uint32_t len. Length of data block. +@param[in] address Starting address in Flash. +@param[in] data Pointer to start of data block. +@param[in] len Length of data block. */ void flash_program(uint32_t address, uint8_t *data, uint32_t len) @@ -350,7 +350,7 @@ first be fully erased before attempting to program it. See the reference manual or the FLASH programming manual for details. -@param[in] uint32_t sector (0 - 11 for some parts, 0-23 on others) +@param[in] sector (0 - 11 for some parts, 0-23 on others) @param program_size: 0 (8-bit), 1 (16-bit), 2 (32-bit), 3 (64-bit) */ @@ -396,7 +396,7 @@ void flash_erase_all_sectors(uint32_t program_size) This performs all operations necessary to program the option bytes. The option bytes do not need to be erased first. -@param[in] uint32_t data to be programmed. +@param[in] data value to be programmed. */ void flash_program_option_bytes(uint32_t data) diff --git a/lib/stm32/f0/flash.c b/lib/stm32/f0/flash.c index 618405b1..0a41c535 100644 --- a/lib/stm32/f0/flash.c +++ b/lib/stm32/f0/flash.c @@ -91,8 +91,8 @@ was not properly erased. Status bit polling is used to detect end of operation. -@param[in] uint32_t address. Full address of flash half word to be programmed. -@param[in] uint16_t data. +@param[in] address Full address of flash half word to be programmed. +@param[in] data half word to write */ void flash_program_half_word(uint32_t address, uint16_t data) @@ -118,7 +118,7 @@ first be fully erased before attempting to program it. Note that the page sizes differ between devices. See the reference manual or the FLASH programming manual for details. -@param[in] uint32_t page_address. Full address of flash page to be erased. +@param[in] page_address Full address of flash page to be erased. */ void flash_erase_page(uint32_t page_address) diff --git a/lib/stm32/f1/flash.c b/lib/stm32/f1/flash.c index 5712e1cd..76330eae 100644 --- a/lib/stm32/f1/flash.c +++ b/lib/stm32/f1/flash.c @@ -221,8 +221,8 @@ was not properly erased. Status bit polling is used to detect end of operation. -@param[in] uint32_t address. Full address of flash half word to be programmed. -@param[in] uint16_t data. +@param[in] address Full address of flash half word to be programmed. +@param[in] data half word to write */ void flash_program_half_word(uint32_t address, uint16_t data) @@ -252,7 +252,7 @@ first be fully erased before attempting to program it. Note that the page sizes differ between devices. See the reference manual or the FLASH programming manual for details. -@param[in] uint32_t page_address. Full address of flash page to be erased. +@param[in] page_address Full address of flash page to be erased. */ void flash_erase_page(uint32_t page_address) diff --git a/lib/stm32/l1/flash.c b/lib/stm32/l1/flash.c index fdd2cca3..f76503e7 100644 --- a/lib/stm32/l1/flash.c +++ b/lib/stm32/l1/flash.c @@ -108,7 +108,7 @@ latency must be changed to the appropriate value before any increase in clock speed, or after any decrease in clock speed. A latency setting of zero only applies if 64-bit mode is not used. -@param[in] uint32_t ws: values from @ref flash_latency. +@param[in] ws values from @ref flash_latency. */ void flash_set_ws(uint32_t ws) @@ -188,8 +188,8 @@ void eeprom_program_word(uint32_t address, uint32_t data) { * * @param[in] address must point to EEPROM space, no checking! * @param[in] data pointer to data to write - * @param[in] length size of of data in WORDS! - * */ + * @param[in] length_in_words size of of data in WORDS! + */ void eeprom_program_words(uint32_t address, uint32_t *data, int length_in_words) { int i;